SiC Crystals Having Spatially Uniform Doping Impurities

ABSTRACT

A sublimation-grown silicon carbide (SiC) single crystal boule includes a deep level dopant introduced into the SiC single crystal boule during sublimation-growth thereof such that in a continuous section of the boule that is not less than 50% of a continuous length of said boule, the deep level dopant concentration at the boule center varies by not more than 25% from the average concentration of the deep level dopant in the continuous section of the boule.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of co-pending U.S. patent applicationSer. No. 12/573,288, filed Oct. 5, 2009, which is a divisional of U.S.patent application Ser. No. 11/405,368, filed Apr. 17, 2006, now U.S.Pat. No. 7,608,524, which claims priority from U.S. Provisional PatentApplication No. 60/672,945, filed Apr. 19, 2005, all of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

Unique electronic properties of silicon carbide (SiC) make it a verydesirable material for state-of-the-art semiconductor devices that canoperate at high frequencies, high voltages and current densities, and inharsh conditions. In many such devices, silicon carbide is utilized as asubstrate on which the semiconductor device structure is formed usingepitaxy, photolithography and metallization. Depending on the devicedesign, the substrate must possess specified electronic parameters, suchas conductivity type and resistivity. While devices operating at highand microwave frequencies (RF devices) require semi-insulating (SI)substrates with very high resistivity, for other devices, such as highpower switching devices, low-resistivity n-type and p-type substratesare needed.

Presently, SiC single crystals are grown on the industrial scale by asublimation technique called Physical Vapor Transport (PVT). A schematicdiagram of a typical prior art PVT arrangement is shown in FIG. 1. InPVT, polycrystalline grains of silicon carbide (SiC source) 1 are loadedon the bottom of a growth container 2 and a SiC seed crystal 4 isattached to a top of growth container 2. Desirably, growth container 2is made of a material, such as graphite, that is not reactive with SiCor any dopant (discussed hereinafter) added thereto. The loaded growthcontainer 2 is evacuated, filled with inert gas to a certain, desiredpressure and heated via at least one heating element 3 (e.g., an RFcoil) to a growth temperature, e.g., between 1900° C. and 2400° C.Growth container 2 is heated in such a fashion that a verticaltemperature gradient is created making the SiC source 1 temperaturehigher than that of the SiC seed 4. At high temperatures, siliconcarbide of the SiC source 1 sublimes releasing a spectrum of volatilemolecular species to the vapor phase. The most abundant of these gaseousspecies are Si, Si₂C and SiC₂. Driven by the temperature gradient, theyare transported to the SiC seed 4 and condense on it causing growth of aSiC single crystal 5 on the SiC seed 4. Prior art patents in this areainclude, for example, U.S. Pat. Nos. 6,805,745; 5,683,507; 5,611,955;5,667,587; 5,746,827; and Re. 34,861, which are all incorporated hereinby reference.

Those skilled in the art of semiconductor materials know that productionof SiC substrates with desirable electronic properties is impossiblewithout purposeful introduction of certain impurities in a process knownas doping. In silicon carbide, the chemical bonds are so exceptionallystrong and solid-state diffusion of impurities is so slow that doping inthe bulk can be accomplished only at the stage of crystal growth, whenthe doping element (dopant) incorporates directly into the lattice ofthe growing SiC crystal 5.

As a particular example of SiC doping during growth, n-type SiC crystalsare produced by adding small amounts of gaseous nitrogen (N₂) to growthcontainer 2 atmosphere. Nitrogen-doped SiC single crystals with veryuniform electrical properties can be readily grown by maintainingappropriate partial pressure of N₂ during growth.

With the exception of the nitrogen-doped crystals, attaining uniformelectrical properties in other types of SiC crystals, includingsemi-insulating, p-type and phosphorus doped n-type crystals, is muchmore difficult because the doping compounds are not gaseous but solid.Vanadium is one particularly important dopant, which is used to producea high-resistivity semi-insulating SiC crystal. Aluminum is anotherimportant dopant used for the growth of conductive crystals of p-type.Other solid dopants include boron, phosphorus, heavy metals and rareearth elements.

Prior art doping of SiC crystals using a solid dopant is carried out byadmixing small amounts of impurity directly to the SiC source 1. Forinstance, vanadium can be introduced in the form of elemental vanadium,vanadium carbide or vanadium silicide. Aluminum can be introduced in theelemental form, aluminum carbide or aluminum silicide. Other suitablesolid dopants, such as boron or phosphorus, can be similarly introducedas elements, carbides or silicides. The doping compound can be in thephysical form of powder, pieces or chips.

During SiC crystal 5 sublimation growth, multi-step chemical reactionstake place between the SiC source 1 and the dopant admixed directly inthe SiC source. These reactions proceed through several stages and leadto the formation of multiple intermediary compounds. In the case ofvanadium doping, thermodynamic analysis shows that the product ofreaction between SiC and vanadium dopant (whether elemental, carbide orsilicide) depends on the stoichiometry of SiC. That is, when the SiCsource 1 is Si-rich and its composition corresponds to the two-phaseequilibrium between SiC and Si, formation of vanadium silicide (VSi₂) islikely. When the SiC source is C-rich and its composition corresponds tothe two-phase equilibrium between SiC and C, formation of vanadiumcarbide (VC_(x)) is likely.

It is known that freshly synthesized SiC source 1 is, typically,Si-rich. Due to the incongruent character of SiC sublimation, theinitially silicon-rich SiC source 1 gradually becomes carbon-rich. Thischange in the stoichiometry of the SiC source 1 during sublimationgrowth causes the following sequence of reactions:

During initial stages of growth, when the SiC source 1 is Si-rich,reaction between vanadium dopant and SiC yields vanadium silicide VSi₂.

As the growth progresses and the SiC source 1 becomes more carbon-rich,vanadium silicide converts to intermediate carbo-silicide VC_(x)Si_(y).

During final stages of growth, when the SiC source 1 is carbon-rich,vanadium carbo-silicide converts into vanadium carbide VC_(x).

Accordingly, the partial pressure of vanadium-bearing species in thevapor phase decreases from high at the beginning of growth to low at theend. The change in the vanadium partial pressure results in thecharacteristic concentration profile with too much vanadium in thefirst-to-grow portions of the SiC crystal 5 boule and too little in thelast-to-grow portions. For this reason, electrical properties of SiCcrystals grown using the doping technique of prior art are spatiallynonuniform and the yield of high electronic quality substrates is low.

The above case of vanadium doping was given for the purpose of exampleonly. Similar problems exist in the cases when other solid dopants areadded to the SiC source 1 directly, including, but not limited toaluminum, boron and phosphorus.

SUMMARY OF THE INVENTION

The present invention is a system for producing spatially uniform andcontrolled concentration of a dopant throughout a SiC crystal boule thatavoids or eliminates the too high dopant concentration in thefirst-to-grow boule portions and the too low dopant concentration in thelast-to-grow portions. The dopant concentration can be sufficiently highto achieve the desired electronic properties of the SiC material while,at the same time, the dopant concentration can be low enough to avoidgeneration of crystal defects. Moreover, the dopant concentration doesnot change appreciably as the crystal grows. Therefore, longer bouleswith spatially uniform electrical properties can be grown resulting inhigher quality of the SiC substrates, higher yields and productivity.

More specifically, the invention is a sublimation-grown silicon carbide(SiC) single crystal boule including a deep level dopant introduced intothe SiC single crystal boule during sublimation-growth thereof such thatin a continuous section of the boule that is not less than 50% of acontinuous length of said boule, the deep level dopant concentration atthe boule center varies by not more than 25% from the averageconcentration of the deep level dopant in said continuous section of theboule.

The invention is also a sublimation-grown silicon carbide (SiC) singlecrystal boule including a deep level dopant introduced into the SiCsingle crystal boule during sublimation-growth thereof such that in asublimation-growth direction of the SiC single crystal boule aconcentration of the deep level dopant in a plurality of at least 10consecutive wafers obtained from the SiC single crystal boule varies bynot more than 25% from the average concentration of the deep leveldopant in any one of the plurality of wafers.

Last, the invention is a pair of silicon carbide (SiC) wafers obtainedfrom first and second parts of a sublimation-grown SiC single crystalboule that are spaced from each other a distance no less than athickness of at least eight other SiC wafers, wherein one of the pair ofwafers has a concentration of the deep level dopant that is differentfrom the concentration of the deep level dopant in the other of the pairof wafers by not more than 25%.

The deep level dopant is desirably vanadium. The concentration ofvanadium can be between 2×10⁶ cm⁻³ and 2×10⁷ cm⁻³.

The resistivity of each of the plurality of wafers is desirably greaterthan about 5×10⁹ ohm-cm, is more desirably greater than about 1×10¹⁰ohm-cm, is even more desirably greater than about 5×10¹⁰ ohm-cm, and ismost desirably greater than about 1×10¹¹ ohm-cm.

The plurality of wafers is desirably at least 13 wafers and is mostdesirably at least 17 wafers.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross section of a prior art physical vapor transportarrangement;

FIG. 2 is a cross section of a time-release capsule in accordance withthe present invention for use in the physical vapor transportarrangement shown in FIG. 1;

FIGS. 3 a-3 c are cross-sectional views of one or more capsules of FIG.2 positioned in different locations within the physical vapor transportarrangement shown in FIG. 1;

FIG. 4 is a graph of resistivity versus wafer number for wafers slicedfrom a boule grown in accordance with the prior art;

FIG. 5 is a low magnification optical view of the first wafer utilizedto form the plot shown in FIG. 4;

FIG. 6 is a plot of the resistivity of each wafer sliced from a boulegrown in accordance with the present invention; and

FIG. 7 is another plot of the resistivity of each wafer sliced fromanother boule grown in accordance with the present invention.

DETAILED DESCRIPTION OF THE INVENTION

With reference to FIG. 2, the advantages of spatially uniform andcontrolled doping are realized using a time-release capsule 14, which isloaded with a stable form of solid dopant, and placed inside growthcontainer 2. Capsule 14 is desirably made of an inert material, which isreactive with neither SiC nor the dopant. For a majority ofapplications, dense and low-porosity graphite is a preferred materialfor capsule 14. Other possible materials include refractory metals,their carbides and nitrides. However, this is not to be construed aslimiting the invention.

Capsule 14 includes a tight lid 15 having one or more calibratedthrough-holes or capillaries 16 of predetermined diameter and length.There are no limitations on the dimensions of capsule 14 except that itshould fit inside growth container 2 and not restrict the flow of vaporto the SiC seed 4.

At a suitable time, capsule 14 is loaded with the proper amount of soliddopant 17. Dopant 17 must be either in a stable chemical form that isnot reactive with the material of capsule 14 or in a form that uponreaction with the material forming capsule 14 produces a stablecompound. For the majority of practical applications, the preferredforms of solid dopant are: (i) elemental form, (ii) carbide and (iii)silicide. However, this is not to be construed as limiting theinvention.

During sublimation growth of the SiC crystal 5, capsule 14 is situatedinside growth container 2. In one embodiment, shown in FIG. 3 a, asingle capsule 14 is positioned on the top surface of the SiC source 1near the axis of growth container 2. In another embodiment, shown inFIG. 3 b, several capsules 14 are positioned on the top surface of theSiC source 1 near the wall of growth container 2. In yet anotherembodiment, shown FIG. 3 c, capsule 14 is buried within the materialforming the SiC source 1.

The principle of operation of capsule 14 is based on the well-knownphenomenon of effusion, i.e., the slow escape of vapor from a sealedvessel through a small orifice. At high temperatures, the vapor pressureof dopant 17 inside capsule 14 forces it to escape through eachcapillary 16. If the cross section of each capillary 16 is sufficientlysmall, the vapor pressure of dopant 17 in capsule 14 does not differsubstantially from the equilibrium value.

The laws of effusion are well-known and, for given growth conditions(temperature, vapor pressure of the inert gas, volatility of thesubstance contained in capsule 14, capillary 16 diameter and capillary16 length), the flux of the molecules of dopant 17 escaping capsule 14via each capillary 16 can be readily calculated. Thus, the dimension ofeach capillary 16 and number of capillaries 16 can be tailored toachieve a steady and well-controlled flux of the impurity dopant 17atoms from capsule 14 to the growing SiC crystal 5.

For relatively small doping levels, a capsule 14 having a singlecapillary 16 can be used (see embodiment in FIG. 3 a). For higher dopinglevels or doping with multiple dopants 17, multiple capsules 14 can beused (see embodiment in FIG. 3 b), as well as a capsule 14 with multiplecapillaries. For special purposes, such as programmable or delayeddoping, one or more time-release capsules 14 buried in the depth of theSiC source 1 can be utilized (see embodiment in FIG. 3 c).

According to prior art SiC doping, a small amount of dopant is admixeddirectly to the SiC source 1 material, leading to chemical reactionsbetween the dopant and SiC source 1. These reactions, combined withchanges in the stoichiometry of the SiC source 1 material, lead toprogressive changes in the partial pressure of the dopant. As a result,prior art doping produces initially high concentrations of dopant in thecrystal followed by a decrease in the dopant concentration over the SiCcrystal 5 length. Crystals grown according to the prior art have toohigh a degree of dopant in the first-to-grow sections and insufficientdopant in the last-to-grow sections. The dopant level in thefirst-to-grow boule sections can be so high that second-phaseprecipitates form in the crystal bulk leading to the generation ofcrystal defects.

The present invention eliminates the problems of the prior art by usingone or more time-release capsules 14 for the doping of SiC crystals 5during crystal growth. The invention has two distinct advantages:

First, the present invention eliminates direct contact between thedopant 17 and the SiC source 1. This is accomplished by placing thedopant 17 inside of a capsule 14 made of an inert material.

Second, the present invention offers a means for precise control of thedopant 17 concentration. This is achieved by choosing the number ofcapsules 14, the number and dimensions of the capillaries 16, and theposition of each capsule 14 within growth container 2.

The present invention offers the following technical advantages over theprior art. First, it eliminates direct contact between the dopant 17 andthe SiC source 1, so the transient processes associated with thechemical reactions between the dopant 17 and SiC source 1 are avoided oreliminated. Secondly, the present invention provides a means toprecisely control the flux of the dopant 17 to the SiC seed 4. Thesetechnical advantages lead to the production of precisely and uniformlydoped SiC crystals 5.

The direct consequence of precise and spatially uniform doping is SiCsingle crystals 5 with spatially uniform and controllable electricalproperties. In addition to the superior electrical properties, theinvention avoids or eliminates the formation of impurity precipitatesand associated defects and, thus, leads to the improvement in the SiCcrystal 5 quality and wafer yield.

Specifically, for a vanadium doped SiC crystal 5, the application of thepresent invention increases the yield of usable prime quality SiC wafersby as much as 50%. This in-turn leads to reduced costs and improvedprofitability.

The present invention has been applied to the growth of semi-insulating6H—SiC single crystals doped during growth with vanadium. However, thisis not to be construed as limiting the invention since it is envisionedthat the invention can also be applied to the growth of 4H—SiC, 3C—SiCor 15R—SiC single crystals doped during growth with a suitable dopant.In Examples 2 and 3 below, a single time-release capsule 14 made of puredense graphite was used. All other parameters of the SiC growth process,such as temperature, pressure, temperature gradient, etc., were inaccordance with existing growth techniques used for the production ofSiC crystals 5.

Example 1

In accordance with the prior art SiC crystal growth method, anappropriate amount of elemental vanadium was admixed to the SiC source1. The SiC source/vanadium mixture and a SiC seed 4 were loaded intogrowth container 2 which was then evacuated and filled with an inert gasto a desired pressure. Following this, the temperature of growthcontainer 2 was raised to a temperature sufficient to cause the growthof the SiC crystal 5.

Thereafter, the grown SiC crystal 5 boule was sliced into wafers and theimpurity content for vanadium and other elements was measured usingSecondary Ion Mass Spectroscopy (SIMS) in wafer #2 and wafer #17 (thelast wafer in the boule). The results showed that wafer #2 containedvanadium at about 1.4×10¹⁷ cm⁻³ while wafer #17 contained vanadium atabout 2×10¹⁴ cm⁻³.

With reference to FIG. 4, the resistivity of each wafer obtained fromthe grown boule was measured and plotted. In the plot, each pointrepresents an average resistivity for the particular wafer. As can beseen, the resistivity of the first-to-grow wafers is very high (on theorder of 2×10¹¹ Ωcm) while the resistivity of the last-to-grow wafers islow, below 10⁵ Ωcm. One skilled in the art would immediately recognizethat only those wafers that have the resistivity above 10⁵ Ωcm aresemi-insulating and can be used in the manufacturing of RF devices,while wafers with the resistivity below 10⁵ Ωcm would be rejected.

Investigation under a low-magnification optical microscope of thefirst-to-grow wafers sliced from this boule showed that at least threeof them contained precipitates of V-rich second phase (see FIG. 5). Theprecipitates caused generation of defects such as dislocations andmicropipes, which spread from the area populated by precipitates intoother parts of the boule.

Thus, prior art SiC doping causes nonuniform distribution of dopant,spatially nonuniform electrical properties, and formation of crystaldefects.

Example 2

In accordance with a SiC crystal growth method of the present invention,a capsule 14 having a capillary 16 of 1.5 mm in diameter and 6 mm longwas loaded with 1 g of pure vanadium carbide (VC_(0.88), 99.999+%).Capsule 14 was positioned atop the SiC source 1 in growth container 2.All other parameters of this growth run were in accordance with existingstandard technological procedures.

After finishing this growth run and cooling to room temperature, capsule14 was recovered and its content investigated. A pellet of sinteredvanadium carbide was found inside capsule 14. Chemical analysis of thepellet showed that it consisted of vanadium and carbon in thestoichiometric ratio of VC_(x) (x≈0.8) with traces of silicon accountingfor less than 3 weight %. Thus, there was no major chemicaltransformation in capsule 14 during growth, and vanadium was preservedin its stable form of vanadium carbide. The traces of silicon could be aresult of silicon diffusion through the capsule wall or silicon vaporback streaming through the capillary 16. Both these marginal processescould not change significantly the composition of the dopant 17 incapsule 14.

The grown boule was sliced into wafers, two of which, wafer #03 (nearthe SiC seed 4) and wafer #15 (near the boule dome), were analyzed forimpurity content using SIMS. The results showed that wafer #03 containedvanadium at a level of 2.90×10¹⁶ cm⁻³ while wafer #15 contained vanadiumat a level of 2.34×10¹⁶ cm⁻³. Investigation under a microscope found noprecipitates of secondary phases. Moreover, the density of micropipesand other defects in this boule was observed to be low.

With reference to FIG. 6, the resistivity of each wafer obtained fromthe boule grown in accordance with this Example 2 was measured andplotted. In the plot, each point represents an average resistivity forthe particular wafer. As can be seen, the resistivity of all 15 waferssliced from this boule was close to 1.7×10¹¹ Ωcm, with no visibledecrease in the last-to-grow wafers.

Example 3

In accordance with a SiC crystal growth method of the present invention,a capsule 14 having a capillary 16 of 1.5 mm in diameter and 6 mm longwas loaded with 1 g of elemental vanadium of 99.995% purity. Capsule 14was positioned atop the SiC source 1 in growth container 2. All otherparameters of this growth run were in accordance with existing standardtechnological procedures.

After finishing this growth run and cooling to room temperature, thecapsule content was investigated. It was found that during heating tothe growth temperature, vanadium melted and reacted with carbon of thecapsule wall to form stable vanadium carbide, VC_(x) with x≈0.9. Nofurther chemical transformations occurred during growth cycle.

The grown boule was sliced into wafers, two of which, wafer #03 andwafer #17 (the last wafer of the boule), were analyzed for impuritycontent using SIMS. The results showed that wafer #03 contained vanadiumat a level of 3.4×10¹⁶ cm⁻³ while wafer #17 contained vanadium at alevel of about 2.7×10¹⁶ cm⁻³.

The resistivity in the wafers sliced from this boule was so high that itexceeded the upper sensitivity limit of the measuring instrument.Accordingly, the resistivity data is plotted in FIG. 7 as empty circlesat 10¹² Ωcm indicating that the actual resistivity is higher. Thesevalues of resistivity exceeded by several orders of magnitude thecurrent requirements for semi- insulating SiC substrates.

The level of vanadium in this boule was high enough to cause fullelectrical compensation, but much lower than the solubility limit, so noprecipitates of secondary phases were formed. The grown boule was ofgood crystal quality with low densities of micropipes and other defects.

The invention has been described with reference to the preferredembodiments. Obvious modifications and alterations will occur to othersupon reading and understanding the preceding detailed description. It isintended that the invention be construed as including all suchmodifications and alterations insofar as they come within the scope ofthe appended claims or the equivalents thereof.

1. A sublimation-grown silicon carbide (SiC) single crystal bouleincluding a deep level dopant introduced into the SiC single crystalboule during sublimation-growth thereof such that in a continuoussection of the boule that is not less than 50% of a continuous length ofsaid boule, the deep level dopant concentration at the boule centervaries by not more than 25% from the average concentration of the deeplevel dopant in said continuous section of the boule.
 2. The SiC bouleof claim 1, wherein the deep level dopant is vanadium.
 3. The SiC bouleof claim 2, wherein the concentration of vanadium is between 2×10⁶ cm⁻³and 2×10⁷ cm⁻³.
 4. The SiC boule of claim 1, wherein a resistivity ofeach of a plurality of wafers obtained from the boule is greater thanabout 5×10⁹ ohm-cm.
 5. The SiC boule of claim 1, wherein a resistivityof each of a plurality of wafers obtained from the boule is greater thanabout 1×10¹⁰ ohm-cm.
 6. The SiC boule of claim 1, wherein a resistivityof each of a plurality of wafers obtained from the boule is greater thanabout 5×10¹⁰ ohm-cm.
 7. The SiC boule of claim 1, wherein a resistivityof each of a plurality of wafers obtained from the boule is greater thanabout 1×10¹¹ ohm-cm.
 8. The SiC boule of claim 1, wherein at least 10wafers are obtained from the boule.
 9. The SiC boule of claim 1, whereinat least 13 wafers are obtained from the boule.
 10. The SiC boule ofclaim 1, wherein at least 17 wafers are obtained from the boule.
 11. Asublimation-grown silicon carbide (SiC) single crystal boule including adeep level dopant introduced into the SiC single crystal boule duringsublimation-growth thereof such that in a sublimation-growth directionof the SiC single crystal boule a concentration of the deep level dopantin a plurality of at least 10 consecutive wafers obtained from the SiCsingle crystal boule varies by not more than 25% from the averageconcentration of the deep level dopant in any one of the plurality ofwafers.
 12. The SiC boule of claim 11, wherein the deep level dopant isvanadium.
 13. The SiC boule of claim 12, wherein the concentration ofvanadium is between 2×10⁶ cm⁻³ and 2×10⁷ cm⁻³.
 14. The SiC boule ofclaim 11, wherein the resistivity of each of the plurality of wafers isgreater than about 5×10⁹ ohm-cm.
 15. The SiC boule of claim 11, whereinthe resistivity of each of the plurality of wafers is greater than about1×10¹⁰ ohm-cm.
 16. The SiC boule of claim 11, wherein the resistivity ofeach of the plurality of wafers is greater than about 5×10¹⁰ ohm-cm. 17.The SiC boule of claim 11, wherein the resistivity of each of theplurality of wafers is greater than about 1×10¹¹ ohm-cm.
 18. The SiCboule of claim 11, wherein the plurality of wafers is at least 13wafers.
 19. The SiC boule of claim 11, wherein the plurality of wafersis desirably at least 17 wafers.
 20. A pair of silicon carbide (SiC)wafers obtained from first and second parts of a sublimation-grown SiCsingle crystal boule that are spaced from each other a distance no lessthan a thickness of at least eight other SiC wafers, wherein one of thepair of wafers has a concentration of the deep level dopant that isdifferent from the concentration of the deep level dopant in the otherof the pair of wafers by not more than 25%.
 21. The SiC wafers of claim20, wherein the deep level dopant is vanadium.
 22. The SiC wafers ofclaim 21, wherein the concentration of vanadium is between 2×10⁶ cm⁻³and 2×10⁷ cm⁻³.
 23. The SiC boule of claim 20, wherein the resistivityof each of the plurality of wafers is greater than about 5×10⁹ ohm-cm.24. The SiC boule of claim 20, wherein the resistivity of each of theplurality of wafers is greater than about 1×10¹⁰ ohm-cm.
 25. The SiCboule of claim 20, wherein the resistivity of each of the plurality ofwafers is greater than about 5×10¹⁰ ohm-cm.
 26. The SiC boule of claim20, wherein the resistivity of each of the plurality of wafers isgreater than about 1×10¹¹ ohm-cm.
 27. The SiC boule of claim 20, whereinthe plurality of wafers is at least 13 wafers.
 28. The SiC boule ofclaim 20, wherein the plurality of wafers is desirably at least 17wafers.